王宏达

（一）本课题组聚焦五族元素（主要为锑、铋）A17相类黑磷二维材料，研究其电学输运性质。

这类材料兼具石墨烯的高迁移率（100–10000 cm²/(V·s)）与可调带隙（0–0.8 eV）特性，是构建新型电子与光电器件的理想体系。我们重点探索其各向异性电子输运机理，并通过化学修饰、电场调控、应变工程及异质结构建等手段，实现对载流子迁移率与能带结构的有效调控，旨在为下一代高性能、低功耗电子材料提供材料基础与理论支持。

（二）本课题组致力于研发以层状Sillén相铋氧化氯材料为核心的中低温固态氧化物燃料电池（SOFC）电解质。

围绕“是否存优于萤石结构的新型氧离子导体？”这一科学问题，我们重点研究该材料的晶体结构、氧空位调控与离子传导机制之间的构效关系。通过化学掺杂与微观结构设计，我们系统优化其层内与层间的离子电导率及稳定性，并开展器件层次的集成与验证，旨在实现SOFC在350–650°C工作温度下的高效运行，推动中低温固态能源器件的发展。

1.  Ren, Yiyuan;# Zhang, Zhuo;# Lu, Yuan; Wu, Nan; Tang, Yinliang; Yu, Yi; Wang, Hung-Ta,* Multi-Layer A17 Black Antimonene via van der Waals Epitaxy. ACS Nano 2025 Vol. 19 Issue 41 Pages 36589-36601

 新闻：物质学院联合团队在亚稳态二维锑烯可控生长与电学性能研究中取得进展

2.  Wu, C. C.;# Fu, M. H.;# Zhai, W. B.; Tang, Y. J.; Men, C.; Yu, Y.; Wang, H. T.* Elastic Properties of BiOCl and Bi₃O₄Cl Freestanding Circular Membranes. ACS Applied Materials & Interfaces 2025, 17, 35857-35867.

3. Wenbo Zhai, Minghui Fu, Xiaoyan Wu, Hung-Ta Wang, Wei Liu, and Yi Yu, Unveiling Cu Nanoparticles Formed During Li Deposition in Anode-Free Batteries, The Journal of Physical Chemistry Letters, 2024 15 (39), 9954-9959.

4. Chao Zhang,# Wei Meng,# Jinjin He, Peihong Cheng, Rong Gao, Minghui Fu, Yinliang Tang, Zhuo Zhang, Yiyuan Ren, Xuezhen Du, Yujing Tang, Yan Zhang, Rongxin Xiong, Shengnan Lu, Zhen Gao, Huili Liu, Yifan Liu, Hung-Ta Wang;* Hydrogen effect on diffuson- dominant  thermal conductivity in a-SiNx, Physical Review B, 2024, 110, 125101.

5. Nan Wu,# Xiangchen Hu,# Yinliang Tang,# Congcong Wu, Yu Chen, Yiyuan Ren, Zhuo Zhang, Yi Yu, Hung-Ta Wang ;* Metastable Square Bismuth Allotrope Oriented by Six-fold Symmetric Mica，npj 2D Materials and Applications, 2024, 8:60.

6. Lele Zhou, Zhuo Zhang, Yinliang Tang, Changhao Men, Yuan Luo, Hung-Ta Wang, Yifan Liu;* Polarity-dependent electro-wetting/-dewetting for efficient droplet manipulation. Physics of Fluids, 2024; 36 (3): 031705.

7. Minghui Fu,# Hongbin Dou,# Wenbo Zhai,# Bingsen Hou, Congcong Wu, Wei Meng, Nan Wu, Zhuo Zhang, Tsu-Chien Weng,* Yi Yu,* and Hung-Ta Wang;* Enhancing UV-C photoelectron lifetimes for avalanche-like photocurrents in carbon doped Bi₃O₄Cl Nanosheets, ACS Applied Materials & Interfaces, 2023, 15(27), 32525-52537. 

8. Congcong Wu, Jun Peng, Weiwen Pu, Shengnan Lu, Chao Zhang, Nan Wu, Zhaoru Sun, Hongti Zhang, and Hung-Ta Wang;* Elastic properties of high-symmetry Sb₄O₆ cage-molecular crystal,The Journal of Physical Chemistry Letters, 2021, 12(37), 9011-9019.

9. Yang, Xianzhong#; Lu, Shengnan#; Peng, Jun; Hu, Xiangchen; Wu, Nan; Wu, Congcong; Zhang, Chao; Huang, Yifan; Yu, Yi; Wang, Hung-Ta;* Ambipolar two-dimensional bismuth nanostructures in junction with bismuth oxychloride, Nano Research, 2021, 14(4): 1103-1109.

10. Peng, Jun; Pu, Weiwen; Lu, Shengnan; Yang, Xianzhong; Wu, Congcong; Wu, Nan; Sun, Zhaoru*; Wang, Hung-Ta;* Inorganic low k cage-molecular crystals, Nano Letters, 2021, 21(1): 203-208. (上科大科研进展:物质学院研究团队在低介电常数材料研究中取得重要进展)

11. M. Mathews, H.-T. Wang and L. Li;* Finite element analysis of nanoindentation and elastic behavior of Bi₂Te₃ two-dimensional nanosheets, ECS Journal of Solid State Science and Technology (Focus Issue on Properties, Devices, and Applications Based on 2D Layered Materials), vol. 5 (11), Q3082-Q3087, 2016.

12. H. Yan, C. Vajner, M. Kuhlman, L. Guo, L. Li, P. T. Araujo, and H.-T. Wang;* Elastic behavior of Bi₂Se₃ 2D nanosheets grown by van der Waals epitaxy, Applied Physics Letters, vol. 109, pp. 032103, 2016. 

13. C. Vajner,# H. Yan,# L. Guo, M. Mathews, M. Kuhlman, S. Benefield, P. Kung, L. Li, P. T. Araujo, and H.-T. Wang;* Thickness identification of epitaxial Bi₂Te₃ via optical contrast, 2D Materials, vol. 3(2), 021010, 2016. 

14. J. Lim,# H.-T. Wang,# J. Tang, S. C. Andrews, J. Lee, D. H. Lee, T. P. Russell, and P. Yang;* Simultaneous thermoelectric property measurement and incoherent phonon transport in holey silicon, ACS Nano, vol. 10 (1), pp.124-132, 2016.

15. L. Guo, H. Yan, Q. Moore, M. Buettner, J. Song, L. Li, P. T. Araujo, and H.-T. Wang;* Elastic properties of van der Waals epitaxy grown bismuth telluride 2D nanosheets, Nanoscale, vol. 7, pp. 11915-11921, 2015.

16. T. Ludwig, L. Guo, P. McCrary, Z. Zhang, H. Gordon, H. Quan, M. Stanton, R. M. Frazier, R. D. Rogers, H.-T. Wang, and C. Heath Turner;* Mechanism of bismuth telluride exfoliation in an ionic liquid solvent, Langmuir, vol. 31 (12), pp.3644-3652, 2015.

17. S. Ma, K. Anderson, L. Guo, A. Yousuf, E. C. Ellingsworth, C. Vajner, H.-T. Wang, * and G. Szulczewski;* Temperature dependent thermopower and electrical conductivity of Te nanowire/poly(3,4-ethylenedioxythiophene):poly(4-styrene sulfonate) microribbons, Applied Physics Letters, vol. 105, pp. 073905, 2014.

18. L. Guo, A. Aglan, H. Quan, J. Sun, C. Tang, J. Song, G. Szulczewski, and H.-T. Wang,* Selective adsorption of bismuth telluride nanoplatelets through electrostatic attraction, Physical Chemistry Chemical Physics, vol 16, pp. 11297-11302, 2014.

19. L. Guo, B. C. Ivey, A. Aglan, C. Tang, J. Song, C. H. Turner, R. M. Frazier, A. Gupta, and H.-T. Wang,* Vapor phase growth of bismuth telluride nanoplatelets on flexible polyimide films, ECS Solid State Letters, vol. 2, pp. P19-P21, 2013.

20. P. Mao,# H. T. Wang,# P. D. Yang, and D. J. Wang;* Multinozzle emitter arrays for nanoelectrospray mass spectrometry, Analytical Chemistry, vol. 83, pp. 6082-6089, 2011. (2012 R&D 100 Award)

21. J. Y. Tang,# H. T. Wang,# D. H. Lee, M. Fardy, Z. Y. Huo, T. P. Russell, and P. D. Yang;* Holey silicon as an efficient thermoelectric material, Nano Letters, vol. 10, pp. 4279-4283, 2010.

22. H.-T. Wang, O. A. Nafday, J. R. Haaheim,* E. Tevaarwerk, N. A. Amro, R. G. Sanedrin, C.-Y. Chang, F. Ren, and S. J. Pearton; Toward conductive traces^®: Dip Pen Nanolithography of silver nanoparticle-based inks, Applied Physics Letters, vol. 93, pp. 143105-7, 2008.

23. H. T. Wang, B. S. Kang, F. Ren,* S. J. Pearton, J. W. Johnson, P. Rajagopal, J. C. Roberts, E. L. Piner, and K. J. Linthicum; Electrical detection of kidney injury molecule-1 with AlGaN/GaN high electron mobility transistors, Applied Physics Letters, vol. 91, pp. 222101-3, 2007. (Cover Article)

24. H. T. Wang, B. S. Kang, T. F. Chancellor, Jr., T. P. Lele, Y. Tseng, F. Ren, S. J. Pearton, A. Dabiran, A. Osinsky, and P. P. Chow, Selective detection of Hg (II) ions from Cu(II) and Pb(II) using AlGaN/GaN high electron mobility transistors, Electrochemical and Solid State Letters, vol. 10, pp. J150-J153, 2007.

25. H.-T. Wang, B. S. Kang, T. F. Chancellor, Jr., T. P. Lele, Y. Tseng, F. Ren, S. J. Pearton, W. J. Johnson, P. Rajagopal, J. C. Roberts, E. L. Piner, and K. J. Linthicum, Fast electrical detection of Hg(II) ions with AlGaN/GaN high electron mobility transistors, Applied Physics Letters, vol. 91, pp. 042114-6, 2007.

26. H.-T. Wang, T. J. Anderson, B. S. Kang, F. Ren, C. Li, Z.-N. Low, J. Lin, B. P. Gila, S. J. Pearton, A. Osinsky, and A. Dabiran, Stable hydrogen sensors from AlGaN/GaN heterostructure diodes with TiB₂-based Ohmic contacts, Applied Physics Letters, vol. 90, pp. 252109-11, 2007.

27. H.-T. Wang, T. J. Anderson, F. Ren, C. Li, Z.-N. Low, J. Lin, B. P. Gila, S. J. Pearton, A. Osinsky, and A. Dabiran, Robust detection of hydrogen using differential AlGaN/GaN high electron mobility transistor sensing diodes, Applied Physics Letters, vol. 89, pp. 242111-3, 2006.

28. H.-T. Wang, S. Jang, T. Anderson, J. J. Chen, B. S. Kang, F. Ren, L. F. Voss, L. Stafford, R. Khanna, B. P. Gila, S. J. Pearton, H. Shen, J. R. LaRoche, and K. V. Smith, Increased Schottky barrier heights for Au on n- and p-type GaN using cryogenic metal deposition, Applied Physics Letters, vol. 89, pp. 122106-8, 2006.

29. H. T. Wang, B. S. Kang, J. J. Chen, T. Anderson, S. Jang, F. Ren, H. S. Kim, Y. J. Li, D. P. Norton, and S. J. Pearton;* Band-edge electroluminescence from N⁺ implanted bulk ZnO, Applied Physics Letters, vol. 88, pp.102107-9, 2006.

30. H.-T. Wang, B. S. Kang, F. Ren, A. Herrero, A. M. Gerger, B. P. Gila, S. J. Pearton, H. Shen, J. R. LaRoche, and K. V. Smith, Thermal stability of Au Schottky diodes on GaAs deposited at either 77 or 300 K, Journal of the Electrochemical Society, vol. 153, pp. G787-G790, 2006.

31. H.-T. Wang, S. Jang, T. Anderson, J. J. Chen, B. S. Kang, F. Ren, A. Herrero, A. M. Gerger, B. P. Gila, S. J. Pearton, H. Shen, J. R. LaRoche, and K. V. Smith, Improved Au Schottky contacts on GaAs using cryogenic metal deposition, Journal of Vacuum Science & Technology B, vol. 24, pp. 1799-1802, 2006.

32. H. T. Wang, B. S. Kang, F. Ren, L. C. Tien, P. W. Sadik, D. P. Norton, S. J. Pearton, and J. Lin, Detection of hydrogen at room temperature with catalyst-coated multiple ZnO nanorods, Applied Physics a-Materials Science & Processing, vol. 81, pp. 1117-1119, 2005.

33. H. T. Wang, B. S. Kang, F. Ren, R. C. Fitch, J. K. Gillespie, N. Moser, G. Jessen, T. Jenkins, R. Dettmer, D. Via, A. Crespo, B. P. Gila, C. R. Abernathy, and S. J. Pearton, Comparison of gate and drain current detection of hydrogen at room temperature with AlGaN/GaN high electron mobility transistors, Applied Physics Letters, vol. 87, pp. 172105-7, 2005.

34. H. T. Wang, B. S. Kang, F. Ren, L. C. Tien, P. W. Sadik, D. P. Norton, S. J. Pearton,* and J. Lin; Hydrogen-selective sensing at room temperature with ZnO nanorods, Applied Physics Letters, vol. 86, pp. 243503-5, 2005.

(#：Co-first authors; *：Corresponding author.)

专利：

1.名称 : 三氧化二锑材料作为半导体集成电路层间或金属间的介电材料的应用; 发明人：王宏达;彭俊;陆盛楠;杨先中;武聪聪;吴楠;孙兆茹; 中国专利（2024），专利号： ZL 2020 1 0507612.5