陈建新    特聘教授
研究方向 半导体光电子(中科院上海技术物理研究所研究员)
联系方式 jianxinchen@@mail.sitp.ac.cn
备  注 千人
实验室主页 点此进入
 
  教育背景  
  研究介绍  
主要从事低维半导体微纳结构材料、物理及相关光电器件研究,如新型超晶格红外焦平面探测器、中红外量子级联激光器、量子点激光器等,包括分子束外延生长机理和材料物理、光电器件芯片制备和器件物理以及相关低维半导体结构中量子物理过程研究等。
  科研成果  
1. Studies on InAs/GaSb Superlattice Structural Properties by High Resolution X-ray Diffraction, Zhou Yi, Chen Jianxin, Xu Qingqing, and He Li, J. Vac. Sci. and Technol. B, 30(5), 051203, 2012.


2. Growth and fabrication of InAs/GaSb type-II superlattice mid-wavelength infrared photodetectors,J. Chen, Q.Xu, Y.Zhou, J.Jin, C.Lin and L.He, Nanoscale Research Letters; Vol.6,p.635, 2011.


3. A. Jang, R.W.Adams, J.X. Chen, W. O. Charles, C. Gmachl, L.W. Cheng, F.S. Choa, M.A. Belkin, Room temperature operation of 3.6μm InGaAs/InAlAs quantum cascade laser sources based on intracavity second harmonic generation, Appl. Phys. Lett., 97(14), 141103, 2010.


4. Chen J, Malis O, Sergent, A. M., Sivco, D. L.Weimann, N, Cho AY, In0.68Ga0.32As/Al0.64In0.36As/InP 4.5 μm quantum cascade lasers grown by solid phosphorus molecular beam epitaxy, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 25 (3): 913-915 MAY-JUN 2007.


5. J.X. Chen, A. Markus, A. Fiore, U. Oesterle, R. P. Stanley, J. F. Carlin, R. Houdre and M. Ilegems, Tuning InAs/GaAs quantum dot properties under Stranski-Krastanov growth mode for 1.3 μm application, J. Appl. Phys. Vol. 91 (10), P. 6710, 2002.


6. J.X. Chen, U. Oesterle, A. Fiore, R.P. Stanley, M. Ilegems and T. Todaro, Matrix effects on the structural and optical properties of InAs quantum dots, Appl. Phys. Lett. Vol 79(22), P.3681, 2001.